Infineon Single HEXFET 1 Type N-Channel MOSFET, 179 A, 30 V Enhancement, 3-Pin TO-252 IRFR8314TRPBF

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
915-5027
Mfr. Part No.:
IRFR8314TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

179A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-20/20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Height

2.39mm

Length

6.73mm

Width

7.49 mm

Number of Elements per Chip

1

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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