Infineon OptiMOS 3 Type N-Channel MOSFET, 130 A, 150 V Enhancement, 7-Pin TO-263 IPB065N15N3GATMA1

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Subtotal (1 pack of 2 units)*

Kr.91 34 

(exc. VAT)

Kr.114 18 

(inc. VAT)

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2 +Kr. 45,67Kr. 91,34

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Packaging Options:
RS Stock No.:
906-4283
Mfr. Part No.:
IPB065N15N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

70nC

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.31mm

Width

4.57 mm

Height

9.45mm

Automotive Standard

No

RoHS Status: Exempted

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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