N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC028N06NSATMA1
- RS Stock No.:
- 906-4296
- Mfr. Part No.:
- BSC028N06NSATMA1
- Brand:
- Infineon
820 In stock for same day dispatch
Added
Price Each (In a Pack of 10)
Kr. 23,587
(exc. VAT)
Kr. 29,484
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 40 | Kr. 23,587 | Kr. 235,87 |
| 50 - 90 | Kr. 22,409 | Kr. 224,09 |
| 100 - 240 | Kr. 21,453 | Kr. 214,53 |
| 250 - 490 | Kr. 20,52 | Kr. 205,20 |
| 500 + | Kr. 19,098 | Kr. 190,98 |
| *price indicative | ||
- RS Stock No.:
- 906-4296
- Mfr. Part No.:
- BSC028N06NSATMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TDSON |
| Series | OptiMOS 5 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 4.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 83 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Width | 5.35mm |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Length | 6.1mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Height | 1.1mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |