N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC028N06NSATMA1
- RS Stock No.:
- 906-4296P
- Mfr. Part No.:
- BSC028N06NSATMA1
- Brand:
- Infineon
820 In stock for same day dispatch
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
Kr. 22,409
(exc. VAT)
Kr. 28,011
(inc. VAT)
| Units | Per unit |
| 50 - 90 | Kr. 22,409 |
| 100 - 240 | Kr. 21,453 |
| 250 - 490 | Kr. 20,52 |
| 500 + | Kr. 19,098 |
- RS Stock No.:
- 906-4296P
- Mfr. Part No.:
- BSC028N06NSATMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TDSON |
| Series | OptiMOS 5 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 4.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 83 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 5.35mm |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Length | 6.1mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.1mm |