Infineon OptiMOS 3 Type N-Channel MOSFET, 98 A, 120 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

Kr.73 810 00 

(exc. VAT)

Kr.92 260 00 

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +Kr. 14,762Kr. 73 810,00

*price indicative

RS Stock No.:
911-0777
Mfr. Part No.:
BSC077N12NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

98A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS 3

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

66nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

139W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.35mm

Height

1.1mm

Width

6.1 mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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