Infineon OptiMOS 3 Type N-Channel MOSFET, 23 A, 80 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

Kr.16 615 00 

(exc. VAT)

Kr.20 770 00 

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +Kr. 3,323Kr. 16 615,00

*price indicative

RS Stock No.:
911-0799
Mfr. Part No.:
BSC340N08NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

80V

Package Type

TDSON

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

66mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

32W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.1mm

Length

5.35mm

Width

6.1 mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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