Infineon SIPMOS N-Channel MOSFET, 1.8 A, 60 V Enhancement, 4-Pin SOT-223
- RS Stock No.:
- 911-4827
- Mfr. Part No.:
- BSP295H6327XTSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1000 units, on reels of 1000)*
Kr. 4 340,00
(exc. VAT)
Kr. 5 420,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 1 000 unit(s) shipping from 15 October 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | Kr. 4,34 | Kr. 4 340,00 |
| 2000 - 2000 | Kr. 4,123 | Kr. 4 123,00 |
| 3000 + | Kr. 3,862 | Kr. 3 862,00 |
*price indicative
- RS Stock No.:
- 911-4827
- Mfr. Part No.:
- BSP295H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20, +20V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.5mm | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20, +20V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.5mm | ||
Height 1.6mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 1.8A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP295H6327XTSA1
This MOSFET is engineered for high-performance applications in automation and electronics. Its N-channel configuration combined with an efficient surface mount design allows for effective current control, making it suitable for a range of industrial applications. It supports a maximum drain-source voltage of 60V, ensuring consistent performance for various projects.
Features & Benefits
• Continuously handles a drain current of 1.8A
• Low maximum drain-source resistance of 300mΩ
• Wide gate-source voltage range from -20V to +20V
• Qualified to AEC-Q101 automotive standard for reliability
Applications
• Power management systems for efficient output control
• Motor drives for reliable switching operations
• Signal amplification in various electronic devices
• Automotive electronic control units
What is the typical power dissipation of the component?
It can dissipate up to 1.8W under specified conditions for effective heat management during operation.
How does the gate threshold voltage affect performance?
The maximum gate threshold voltage is 1.8V, which enables the MOSFET to achieve optimal performance at low input levels.
Can this component handle pulsed drain currents?
Yes, it is rated for pulsed drain current up to 6A, allowing it to effectively manage transient conditions.
What packaging options are available?
The MOSFET is available in a SOT-223 surface mount package, optimised for space-efficient designs.
Is the device compliant with environmental standards?
It features Pb-free lead plating and adheres to RoHS compliance, meeting contemporary environmental regulations.
Related links
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