Infineon SIPMOS Type N-Channel MOSFET, 170 mA, 400 V Enhancement, 4-Pin SOT-223 BSP324H6327XTSA1

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Subtotal (1 pack of 50 units)*

Kr.309 55 

(exc. VAT)

Kr.386 95 

(inc. VAT)

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Per Pack*
50 +Kr. 6,191Kr. 309,55

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Packaging Options:
RS Stock No.:
826-9257
Mfr. Part No.:
BSP324H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

170mA

Maximum Drain Source Voltage Vds

400V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

25Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.54nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.8W

Maximum Operating Temperature

150°C

Length

6.5mm

Height

1.6mm

Standards/Approvals

No

Width

3.5 mm

Automotive Standard

AEC-Q101

Distrelec Product Id

304-44-416

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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