Infineon SIPMOS Type N-Channel MOSFET, 170 mA, 400 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

Kr.2 788 00 

(exc. VAT)

Kr.3 485 00 

(inc. VAT)

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1000 - 1000Kr. 2,788Kr. 2 788,00
2000 - 2000Kr. 2,649Kr. 2 649,00
3000 +Kr. 2,482Kr. 2 482,00

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RS Stock No.:
165-5810
Mfr. Part No.:
BSP324H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

170mA

Maximum Drain Source Voltage Vds

400V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

25Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.54nC

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.5mm

Height

1.6mm

Width

3.5 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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