Infineon OptiMOS 3 Type N-Channel MOSFET, 88 A, 200 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

Kr.3 397 90 

(exc. VAT)

Kr.4 247 40 

(inc. VAT)

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  • 100 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 +Kr. 67,958Kr. 3 397,90

*price indicative

RS Stock No.:
911-4899
Mfr. Part No.:
IPP110N20N3GXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

OptiMOS 3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

175°C

Width

4.57 mm

Length

10.36mm

Height

9.45mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
DE

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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