Infineon OptiMOS 3 N-Channel MOSFET, 88 A, 200 V Enhancement, 3-Pin TO-220 IPP110N20N3GXKSA1

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Kr. 58,23

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Kr. 72,79

(inc. VAT)

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1 - 4Kr. 58,23
5 - 9Kr. 56,28
10 - 14Kr. 55,48
15 - 24Kr. 53,77
25 +Kr. 52,28

*price indicative

Packaging Options:
RS Stock No.:
752-8381
Mfr. Part No.:
IPP110N20N3GXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

65nC

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

9.45mm

Width

4.57mm

Length

10.36mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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