P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 Infineon SPP15P10PHXKSA1

RS Stock No.:: 914-0191
Mfr. Part No.:: SPP15P10PHXKSA1
Brand:: Infineon

P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 Infineon SPP15P10PHXKSA1

Available to back order for despatch when stock is available

Price Each (In a Pack of 10)

Kr. 13,535

(exc. VAT)

Kr. 16,919

(inc. VAT)

Units	Per unit	Per Pack*
10 - 90	Kr. 13,535	Kr. 135,35
100 - 490	Kr. 7,686	Kr. 76,86
500 - 990	Kr. 7,49	Kr. 74,90
1000 - 2490	Kr. 7,306	Kr. 73,06
2500 +	Kr. 7,132	Kr. 71,32
*price indicative

RS Stock No.:: 914-0191
Mfr. Part No.:: SPP15P10PHXKSA1
Brand:: Infineon

SPP15P10PH SIPMOS Small Signal Transistor
ESD Control Selection Guide V1

RS Stock No.:: 914-0191
Mfr. Part No.:: SPP15P10PHXKSA1
Brand:: Infineon

SPP15P10PH SIPMOS Small Signal Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	15 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220
Series	SIPMOS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	240 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	128 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.57mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	37 nC @ 10 V
Length	10.36mm
Number of Elements per Chip	1
Transistor Material	Si
Forward Diode Voltage	1.35V
Height	15.95mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	15 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220
Series	SIPMOS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	240 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	128 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.57mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	37 nC @ 10 V
Length	10.36mm
Number of Elements per Chip	1
Transistor Material	Si
Forward Diode Voltage	1.35V
Height	15.95mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 Infineon SPP15P10PHXKSA1

Infineon SIPMOS® P-Channel MOSFETs

Infineon SIPMOS® P-Channel MOSFETs