Wolfspeed C3M Type N-Channel MOSFET, 23 A, 900 V Enhancement, 3-Pin TO-247 C3M0120090D
- RS Stock No.:
- 915-8849
- Mfr. Part No.:
- C3M0120090D
- Brand:
- Wolfspeed
Bulk discount available
Subtotal (1 unit)*
Kr.106 74
(exc. VAT)
Kr.133 42
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 15 unit(s) ready to ship
- Plus 1 unit(s) ready to ship from another location
- Plus 74 unit(s) shipping from 08. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | Kr. 106,74 |
| 5 - 9 | Kr. 100,21 |
| 10 - 29 | Kr. 97,93 |
| 30 - 89 | Kr. 95,18 |
| 90 + | Kr. 93,12 |
*price indicative
- RS Stock No.:
- 915-8849
- Mfr. Part No.:
- C3M0120090D
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | C3M | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 155mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Maximum Power Dissipation Pd | 97W | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Forward Voltage Vf | 4.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Width | 21.1 mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series C3M | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 155mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Maximum Power Dissipation Pd 97W | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Forward Voltage Vf 4.4V | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Width 21.1 mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Related links
- Wolfspeed SiC N-Channel MOSFET 900 V, 3-Pin TO-247 C3M0120090D
- Wolfspeed SiC N-Channel MOSFET 900 V, 3-Pin TO-247 C3M0065090D
- Wolfspeed SiC N-Channel MOSFET 900 V, 3-Pin TO-247 C3M0280090D
- Wolfspeed SiC N-Channel MOSFET 900 V, 4-Pin TO-247-4 C3M0030090K
- Wolfspeed SiC N-Channel MOSFET 900 V, 7-Pin D2PAK C3M0120090J
- Wolfspeed SiC N-Channel MOSFET 900 V, 7-Pin D2PAK C3M0280090J
- Wolfspeed SiC N-Channel MOSFET 900 V, 7-Pin D2PAK C3M0065090J
- Wolfspeed SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 C2M0040120D