SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D

RS Stock No.:: 915-8849P
Mfr. Part No.:: C3M0120090D
Brand:: Wolfspeed

SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D

83 In stock for same day dispatch

Added

Price Each (Supplied in a Tube)

Kr. 91,32

(exc. VAT)

Kr. 114,15

(inc. VAT)

Units	Per unit
5 - 9	Kr. 91,32
10 - 29	Kr. 89,21
30 - 89	Kr. 86,77
90 +	Kr. 84,77

RS Stock No.:: 915-8849P
Mfr. Part No.:: C3M0120090D
Brand:: Wolfspeed

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	23 A
Maximum Drain Source Voltage	900 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	155 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	97 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +18 V
Transistor Material	SiC
Typical Gate Charge @ Vgs	17.3 nC @ 15 V
Length	16.13mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	21.1mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	4.8V
Height	5.21mm

RS Stock No.:: 915-8849P
Mfr. Part No.:: C3M0120090D
Brand:: Wolfspeed