onsemi PowerTrench Type P-Channel MOSFET, 3.5 A, 20 V Enhancement, 8-Pin SOIC FDS9431A

RS Stock No.:: 917-5507
Mfr. Part No.:: FDS9431A
Brand:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 3.5 A, 20 V Enhancement, 8-Pin SOIC FDS9431A

Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.158 875

(exc. VAT)

Kr.198 60

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 2 500 unit(s) shipping from 29. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 75	Kr. 6,355	Kr. 158,88
100 - 225	Kr. 5,476	Kr. 136,90
250 +	Kr. 4,748	Kr. 118,70

*price indicative

RS Stock No.:: 917-5507
Mfr. Part No.:: FDS9431A
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.5A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	130mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8 V
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	6nC
	Maximum Power Dissipation Pd	2.5W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	5mm
	Height	1.5mm
	Width	4 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.5A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 130mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8 V
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 6nC
	Maximum Power Dissipation Pd 2.5W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 5mm
	Height 1.5mm
	Width 4 mm
	Standards/Approvals No
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.