IXYS Single HiperFET, Polar N-Channel MOSFET, 150 A, 150 V Enhancement, 4-Pin SOT-227 IXFN180N15P
- RS Stock No.:
- 920-0757
- Mfr. Part No.:
- IXFN180N15P
- Brand:
- IXYS
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 10 units)*
Kr. 2 652,29
(exc. VAT)
Kr. 3 315,36
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 10 | Kr. 265,229 | Kr. 2 652,29 |
| 20 - 30 | Kr. 246,664 | Kr. 2 466,64 |
| 40 - 90 | Kr. 233,399 | Kr. 2 333,99 |
| 100 - 190 | Kr. 225,444 | Kr. 2 254,44 |
| 200 + | Kr. 198,925 | Kr. 1 989,25 |
*price indicative
- RS Stock No.:
- 920-0757
- Mfr. Part No.:
- IXFN180N15P
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOT-227 | |
| Series | HiperFET, Polar | |
| Mount Type | Panel Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 680W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Length | 38.23mm | |
| Height | 9.6mm | |
| Width | 25.42mm | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOT-227 | ||
Series HiperFET, Polar | ||
Mount Type Panel Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 680W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Length 38.23mm | ||
Height 9.6mm | ||
Width 25.42mm | ||
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