STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 55 V, 3-Pin TO-220 STP80NF55-08
- RS Stock No.:
- 920-8711
- Mfr. Part No.:
- STP80NF55-08
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr. 805,80
(exc. VAT)
Kr. 1 007,25
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 16,116 | Kr. 805,80 |
| 100 - 150 | Kr. 14,153 | Kr. 707,65 |
| 200 - 450 | Kr. 13,783 | Kr. 689,15 |
| 500 - 950 | Kr. 13,428 | Kr. 671,40 |
| 1000 + | Kr. 13,093 | Kr. 654,65 |
*price indicative
- RS Stock No.:
- 920-8711
- Mfr. Part No.:
- STP80NF55-08
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | STripFET II | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 112 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.75mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 55 V | ||
Series STripFET II | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.6mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 112 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 15.75mm | ||
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