onsemi 1200 V 46 A Diode 2-Pin TO-247-2LD NDSH40120C-F155
- RS Stock No.:
- 218-678
- Mfr. Part No.:
- NDSH40120C-F155
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 1 unit)*
Kr.151 69
(exc. VAT)
Kr.189 61
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 896 unit(s) shipping from 26. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Pack(s) | Per Pack |
|---|---|
| 1 - 9 | Kr. 151,69 |
| 10 - 99 | Kr. 136,59 |
| 100 + | Kr. 125,84 |
*price indicative
- RS Stock No.:
- 218-678
- Mfr. Part No.:
- NDSH40120C-F155
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 46A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | NDSH | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 200μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1295A | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 46A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series NDSH | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 200μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1295A | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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