onsemi 1200 V 26 A Diode 2-Pin TO-247-2LD NDSH20120C-F155
- RS Stock No.:
- 218-673
- Mfr. Part No.:
- NDSH20120C-F155
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 1 unit)*
Kr.99 07
(exc. VAT)
Kr.123 84
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 27. april 2026
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Pack(s) | Per Pack |
|---|---|
| 1 - 9 | Kr. 99,07 |
| 10 - 99 | Kr. 89,23 |
| 100 - 499 | Kr. 82,37 |
| 500 - 999 | Kr. 76,30 |
| 1000 + | Kr. 68,53 |
*price indicative
- RS Stock No.:
- 218-673
- Mfr. Part No.:
- NDSH20120C-F155
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 26A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | NDSH | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 896A | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 26A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series NDSH | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 896A | ||
Peak Reverse Current Ir 200μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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