STMicroelectronics 650 V 10 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC10G065D
- RS Stock No.:
- 719-659
- Mfr. Part No.:
- STPSC10G065D
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 32,26
(exc. VAT)
Kr. 40,32
(inc. VAT)
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- Plus 270 unit(s) shipping from 20 July 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 32,26 |
| 10 - 99 | Kr. 16,24 |
| 100 - 499 | Kr. 14,53 |
| 500 - 999 | Kr. 11,78 |
| 1000 + | Kr. 11,44 |
*price indicative
- RS Stock No.:
- 719-659
- Mfr. Part No.:
- STPSC10G065D
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A | |
| Maximum Forward Voltage Vf | 1.3V | |
| Peak Reverse Current Ir | 425μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Length | 15.75mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 650A | ||
Maximum Forward Voltage Vf 1.3V | ||
Peak Reverse Current Ir 425μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Length 15.75mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature Based on latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions.
None or negligible reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
ECOPACK2 compliant component
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