STMicroelectronics 650 V 8 A Diode 2-Pin TO-220
- RS Stock No.:
- 164-6987P
- Mfr. Part No.:
- STPSC8065D
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 25 units (supplied in a tube)*
Kr.502 20
(exc. VAT)
Kr.627 75
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 29. juni 2026
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Units | Per unit |
|---|---|
| 25 - 45 | Kr. 20,088 |
| 50 - 120 | Kr. 19,586 |
| 125 - 245 | Kr. 19,082 |
| 250 + | Kr. 18,624 |
*price indicative
- RS Stock No.:
- 164-6987P
- Mfr. Part No.:
- STPSC8065D
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 750μA | |
| Maximum Forward Voltage Vf | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Maximum Operating Temperature | 175°C | |
| Diameter | 3.75 mm | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Reverse Current Ir 750μA | ||
Maximum Forward Voltage Vf 1.65V | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Maximum Operating Temperature 175°C | ||
Diameter 3.75 mm | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 15.75mm | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C