onsemi 650 V 10 A Diode Schottky 2-Pin TO-247
- RS Stock No.:
- 189-0178
- Mfr. Part No.:
- FFSH1065B-F085
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.1 293 27
(exc. VAT)
Kr.1 616 58
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 300 unit(s) shipping from 26. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | Kr. 43,109 | Kr. 1 293,27 |
| 120 - 240 | Kr. 41,945 | Kr. 1 258,35 |
| 270 - 480 | Kr. 40,824 | Kr. 1 224,72 |
| 510 - 990 | Kr. 39,79 | Kr. 1 193,70 |
| 1020 + | Kr. 38,798 | Kr. 1 163,94 |
*price indicative
- RS Stock No.:
- 189-0178
- Mfr. Part No.:
- FFSH1065B-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.4V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 600A | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.82mm | |
| Length | 15.87mm | |
| Width | 4.82 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.4V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 600A | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.82mm | ||
Length 15.87mm | ||
Width 4.82 mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
Related links
- onsemi 650 V 10 A Diode Schottky 2-Pin TO-247 FFSH1065B-F085
- onsemi 650 V 50 A Schottky Diode Schottky 2-Pin TO-247
- onsemi 650 V 50 A Schottky Diode Schottky 2-Pin TO-247 FFSH5065B-F085
- onsemi 650 V 20 A Diode Schottky 2-Pin TO-247
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin D2PAK
- onsemi 650 V 40 A Schottky Diode Schottky 3-Pin TO-247
- onsemi 650 V 14.4 A Schottky Diode Schottky 3-Pin TO-247
- onsemi 650 V 8 A Schottky Diode Schottky 2-Pin D2PAK