onsemi 650 V 9.1 A Schottky Diode Schottky 3-Pin DPAK FFSD0665B-F085
- RS Stock No.:
- 195-8714
- Mfr. Part No.:
- FFSD0665B-F085
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.410 02
(exc. VAT)
Kr.512 52
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 40 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | Kr. 20,501 | Kr. 410,02 |
| 200 - 480 | Kr. 17,675 | Kr. 353,50 |
| 500 + | Kr. 15,318 | Kr. 306,36 |
*price indicative
- RS Stock No.:
- 195-8714
- Mfr. Part No.:
- FFSD0665B-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Surface | |
| Product Type | Schottky Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 9.1A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 28A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160A | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Surface | ||
Product Type Schottky Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 9.1A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 28A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160A | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 6A, 650V, D2, DPAK
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency,increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 °C
PPAP capable
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
Related links
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