onsemi 650 V 11.6 A Schottky Diode Schottky 3-Pin DPAK

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Subtotal (1 reel of 2500 units)*

Kr.33 917 50 

(exc. VAT)

Kr.42 397 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 13,567Kr. 33 917,50

*price indicative

RS Stock No.:
195-8715
Mfr. Part No.:
FFSD0865B-F085
Brand:
onsemi
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Brand

onsemi

Mount Type

Surface

Product Type

Schottky Diode

Package Type

TO-252

Maximum Continuous Forward Current If

11.6A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

EliteSiC

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

3

Minimum Operating Temperature

-55°C

Peak Reverse Current Ir

160A

Maximum Forward Voltage Vf

2.4V

Peak Non-Repetitive Forward Surge Current Ifsm

42A

Maximum Operating Temperature

175°C

Length

6.73mm

Width

6.22 mm

Height

2.39mm

Standards/Approvals

Pb-Free, RoHS

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 8A, 650V, D2, DPAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost

Max Junction Temperature 175 °C

PPAP capable

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

Applications

Automotive HEV-EV Onboard Chargers

Automotive HEV-EV DC-DC Converters

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