onsemi 650 V 11.6 A Schottky Diode Schottky 3-Pin DPAK FFSD0865B-F085
- RS Stock No.:
- 195-8716
- Mfr. Part No.:
- FFSD0865B-F085
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.404 40
(exc. VAT)
Kr.505 60
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 260 unit(s) shipping from 26. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | Kr. 20,22 | Kr. 404,40 |
| 200 - 480 | Kr. 17,429 | Kr. 348,58 |
| 500 + | Kr. 15,112 | Kr. 302,24 |
*price indicative
- RS Stock No.:
- 195-8716
- Mfr. Part No.:
- FFSD0865B-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 11.6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | EliteSiC | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Peak Reverse Current Ir | 160A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 11.6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series EliteSiC | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Peak Reverse Current Ir 160A | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 8A, 650V, D2, DPAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
PPAP capable
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
Related links
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