STMicroelectronics 1200 V 10 A Diode 3-Pin DPAK
- RS Stock No.:
- 210-8744P
- Mfr. Part No.:
- STPSC10H12B2-TR
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
Kr. 2 093,50
(exc. VAT)
Kr. 2 617,00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 03 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 98 | Kr. 41,87 |
| 100 - 248 | Kr. 33,29 |
| 250 + | Kr. 32,49 |
*price indicative
- RS Stock No.:
- 210-8744P
- Mfr. Part No.:
- STPSC10H12B2-TR
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 30μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 60A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.35mm | |
| Standards/Approvals | RoHS | |
| Width | 6.4 mm | |
| Height | 2.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Pin Count 3 | ||
Peak Reverse Current Ir 30μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 60A | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 9.35mm | ||
Standards/Approvals RoHS | ||
Width 6.4 mm | ||
Height 2.2mm | ||
Automotive Standard No | ||
The STMicroelectronics 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
DPAK HV creepage distance (anode to cathode) = 3 mm min.
ECOPACK2 compliant