onsemi 650 V 8 A SiC Schottky Schottky 5-Pin PQFN
- RS Stock No.:
- 214-8795
- Mfr. Part No.:
- FFSM0865B
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
Kr. 39 789,00
(exc. VAT)
Kr. 49 737,00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 13,263 | Kr. 39 789,00 |
*price indicative
- RS Stock No.:
- 214-8795
- Mfr. Part No.:
- FFSM0865B
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | SiC Schottky | |
| Mount Type | Surface | |
| Package Type | PQFN | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Peak Reverse Current Ir | 40μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 8mm | |
| Width | 8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type SiC Schottky | ||
Mount Type Surface | ||
Package Type PQFN | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Peak Reverse Current Ir 40μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 8mm | ||
Width 8 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88
The ON Semiconductor FFSM series is silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It is typically used in inverters, SMPS and UPS etc.
Highest efficiency
Faster operating frequency
Increased power density
Reduced EMI
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