onsemi 650 V 10 A Diode Schottky 5-Pin PQFN FFSM1065B
- RS Stock No.:
- 214-8798
- Mfr. Part No.:
- FFSM1065B
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
Kr.126 85
(exc. VAT)
Kr.158 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 2 980 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | Kr. 25,37 | Kr. 126,85 |
*price indicative
- RS Stock No.:
- 214-8798
- Mfr. Part No.:
- FFSM1065B
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | PQFN | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Peak Reverse Current Ir | 40μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Length | 8mm | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type PQFN | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Peak Reverse Current Ir 40μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Length 8mm | ||
Width 8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88
The ON Semiconductor FFSM series is silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It is typically used in inverters, SMPS and UPS etc.
Highest efficiency
Faster operating frequency
Increased power density
Reduced EMI
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