Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220 IDH06G65C5XKSA2
- RS Stock No.:
- 218-6299
- Mfr. Part No.:
- IDH06G65C5XKSA2
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
Kr. 901,00
(exc. VAT)
Kr. 1 126,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 200 unit(s) shipping from 28 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 18,02 | Kr. 901,00 |
| 100 - 200 | Kr. 15,677 | Kr. 783,85 |
| 250 - 450 | Kr. 14,595 | Kr. 729,75 |
| 500 - 950 | Kr. 13,513 | Kr. 675,65 |
| 1000 + | Kr. 12,865 | Kr. 643,25 |
*price indicative
- RS Stock No.:
- 218-6299
- Mfr. Part No.:
- IDH06G65C5XKSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | SiC Silicon Carbide Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 54A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Reverse Current Ir | 750μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Length | 10.2mm | |
| Height | 29.95mm | |
| Width | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type SiC Silicon Carbide Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 54A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Reverse Current Ir 750μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Length 10.2mm | ||
Height 29.95mm | ||
Width 4.5mm | ||
Automotive Standard No | ||
Infineon 5th Generation thinQ!TM Series SiC Silicon Carbide Diode, 6A Max Continuous Forward Current, 650V Peak Reverse Repetitive Voltage - IDH06G65C5XKSA2
This SiC silicon carbide diode is a high-voltage Schottky rectifier designed for power conversion and switching applications requiring fast recovery and thermal resilience. It operates across an extended temperature range and is supplied in a through-hole TO-220 package suited to conventional heatsinking and mounting methods.
Features and Benefits:
• 650V Peak reverse rating enables high-voltage rectification
• 6A continuous forward current supports sustained load conduction
• 1.7V maximum forward voltage reduces conduction losses
• 54A surge current capacity handles transient inrush events
• 750μA Peak reverse current ensures low reverse leakage
• -55°C to 175°C operating range permits high-temperature operation
• 6A continuous forward current supports sustained load conduction
• 1.7V maximum forward voltage reduces conduction losses
• 54A surge current capacity handles transient inrush events
• 750μA Peak reverse current ensures low reverse leakage
• -55°C to 175°C operating range permits high-temperature operation
Applications
• Suitable for power supplies in industrial converters
• Ideal for automotive-adjacent power electronics (non-automotive standard)
• Used with through-hole assemblies requiring TO-220 mounting
• Can be used for high-voltage DC link rectification
• Used for surge-tolerant input rectifier stages
• Ideal for automotive-adjacent power electronics (non-automotive standard)
• Used with through-hole assemblies requiring TO-220 mounting
• Can be used for high-voltage DC link rectification
• Used for surge-tolerant input rectifier stages
What mounting method does it require?
It is intended for through-hole mounting in a TO-220 package which allows attachment to standard heatsinks.
How many electrical connections are present?
The device provides two pins for electrical connection consistent with single-diode rectifier topology.
Which standards were used in reliability assessment?
Qualification and testing reference J-STD-20 and JESD22 standards.
What type of rectifier topology is implemented?
The part employs a Schottky rectifier structure using silicon carbide semiconductor material.
What are the physical package dimensions?
The component measures 10.2 mm in length, 4.5 mm in width and 29.95 mm in height.
Related links
- Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220 IDH06G65C5XKSA2
- Infineon 650 V 2 A Semiconductor Silicon Carbide Diode 5-Pin PG-VSON-4
- Infineon 650 V 2 A Semiconductor Silicon Carbide Diode 5-Pin PG-VSON-4 IDL02G65C5XUMA2
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220 IDH12G65C5XKSA2
- Infineon 650 V 6 A Diode Schottky 2-Pin TO-220
- Infineon 650 V 6 A Diode Schottky 2-Pin TO-220 IDH06G65C6XKSA1
- Infineon 650 V 10 A SiC Schottky Diode Schottky 5-Pin ThinPAK 8x8
