STMicroelectronics 1.2 kV 10 A Diode 2-Pin D2PAK STPSC10H12G2Y-TR

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Subtotal (1 pack of 2 units)*

Kr. 134,53

(exc. VAT)

Kr. 168,16

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 67,265Kr. 134,53
20 - 98Kr. 65,095Kr. 130,19
100 - 198Kr. 63,035Kr. 126,07
200 +Kr. 54,625Kr. 109,25

*price indicative

Packaging Options:
RS Stock No.:
219-4234
Mfr. Part No.:
STPSC10H12G2Y-TR
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Mount Type

Surface

Product Type

Diode

Package Type

TO-263

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

1.2kV

Diode Configuration

Single

Series

STPSC10H12G2Y-TR

Pin Count

2

Maximum Forward Voltage Vf

2.25V

Peak Reverse Current Ir

30μA

Minimum Operating Temperature

-40°C

Peak Non-Repetitive Forward Surge Current Ifsm

60A

Maximum Operating Temperature

175°C

Length

15.95mm

Standards/Approvals

No

Width

10.4mm

Height

4.3mm

Automotive Standard

No

The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

AEC-Q101 qualified

No or negligible reverse recovery

Switching behaviour independent of temperature

Robust high voltage periphery

PPAP capable

Operating Tj from -40 °C to 175 °C

Low VF

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