Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK

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Subtotal (1 reel of 2500 units)*

Kr.24 780 00 

(exc. VAT)

Kr.30 975 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 9,912Kr. 24 780,00

*price indicative

RS Stock No.:
222-4826
Mfr. Part No.:
IDM02G120C5XTMA1
Brand:
Infineon
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Brand

Infineon

Mount Type

Surface

Product Type

Diode

Package Type

TO-252

Maximum Continuous Forward Current If

2A

Peak Reverse Repetitive Voltage Vrrm

1200V

Series

5th Generation thinQ!TM

Diode Configuration

Silicon Carbide Schottky Diode

Rectifier Type

SiC Schottky

Pin Count

2

Maximum Forward Voltage Vf

2.3V

Minimum Operating Temperature

-55°C

Peak Non-Repetitive Forward Surge Current Ifsm

37A

Maximum Operating Temperature

175°C

Height

10.4mm

Length

6.65mm

Standards/Approvals

J-STD20 and JESD22

Width

2.35 mm

Automotive Standard

No

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Revolutionary semiconductor material - Silicon Carbide

No reverse recovery current / No forward recovery

Temperature independent switching behavior

Low forward voltage even at high operating temperature

Tight forward voltage distribution

Excellent thermal performance

Extended surge current capability

Specified dv/dt ruggedness

Qualified according to JEDEC1) for target applications

Pb-free lead plating; RoHS compliant

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