Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247

Bulk discount available

Subtotal (1 tube of 30 units)*

Kr.2 252 76 

(exc. VAT)

Kr.2 815 95 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30Kr. 75,092Kr. 2 252,76
60 - 60Kr. 71,34Kr. 2 140,20
90 +Kr. 66,832Kr. 2 004,96

*price indicative

RS Stock No.:
222-4843
Mfr. Part No.:
IDWD30G120C5XKSA1
Brand:
Infineon
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Brand

Infineon

Mount Type

Surface

Product Type

SiC Diode

Package Type

TO-247

Maximum Continuous Forward Current If

30A

Peak Reverse Repetitive Voltage Vrrm

1200V

Series

5th Generation CoolSiC 1200V Schottky Diode

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

2

Peak Reverse Current Ir

248μA

Peak Non-Repetitive Forward Surge Current Ifsm

240A

Maximum Forward Voltage Vf

1.65V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

15.8 mm

Length

40.21mm

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

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