Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1

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Kr.133 62 

(exc. VAT)

Kr.167 02 

(inc. VAT)

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1 - 4Kr. 133,62
5 - 9Kr. 126,87
10 - 24Kr. 121,49
25 - 49Kr. 116,23
50 +Kr. 108,34

*price indicative

Packaging Options:
RS Stock No.:
222-4844
Mfr. Part No.:
IDWD30G120C5XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

SiC Diode

Mount Type

Surface

Package Type

TO-247

Maximum Continuous Forward Current If

30A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Series

5th Generation CoolSiC 1200V Schottky Diode

Rectifier Type

Schottky

Pin Count

2

Peak Reverse Current Ir

248μA

Minimum Operating Temperature

-55°C

Peak Non-Repetitive Forward Surge Current Ifsm

240A

Maximum Forward Voltage Vf

1.65V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Length

40.21mm

Width

15.8 mm

Automotive Standard

No

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

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