Infineon 1200 V 20 A SiC Diode Schottky 2-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.1 908 18 

(exc. VAT)

Kr.2 385 24 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30Kr. 63,606Kr. 1 908,18
60 - 120Kr. 60,426Kr. 1 812,78
150 +Kr. 56,61Kr. 1 698,30

*price indicative

RS Stock No.:
222-4841
Mfr. Part No.:
IDWD20G120C5XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

SiC Diode

Mount Type

Surface

Package Type

TO-247

Maximum Continuous Forward Current If

20A

Peak Reverse Repetitive Voltage Vrrm

1200V

Series

5th Generation CoolSiCTM 1200V

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

2

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

1.65V

Peak Reverse Current Ir

166μA

Peak Non-Repetitive Forward Surge Current Ifsm

190A

Maximum Operating Temperature

175°C

Width

15.8 mm

Length

40.21mm

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 20 A in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

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