Infineon 1200 V 10 A Diode Schottky 2-Pin TO-247 IDWD10G120C5XKSA1
- RS Stock No.:
- 222-4838
- Mfr. Part No.:
- IDWD10G120C5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.116 12
(exc. VAT)
Kr.145 16
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 238 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 58,06 | Kr. 116,12 |
| 10 - 18 | Kr. 52,28 | Kr. 104,56 |
| 20 - 48 | Kr. 48,735 | Kr. 97,47 |
| 50 - 98 | Kr. 45,30 | Kr. 90,60 |
| 100 + | Kr. 41,815 | Kr. 83,63 |
*price indicative
- RS Stock No.:
- 222-4838
- Mfr. Part No.:
- IDWD10G120C5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Silicon Carbide Diode | |
| Series | 5th Generation CoolSiCTM 1200V | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Peak Reverse Current Ir | 80μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Length | 40.21mm | |
| Width | 15.8 mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Silicon Carbide Diode | ||
Series 5th Generation CoolSiCTM 1200V | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Peak Reverse Current Ir 80μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 175°C | ||
Length 40.21mm | ||
Width 15.8 mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 10 A is now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.
No reverse recovery current, no forward recovery voltage
Temperature-independent switching behaviour
Low forward voltage even at high operating temperature
Tight forward voltage distribution
High surge current capability
Real two-pin package with 8.7 mm creepage and clearance distances
Related links
- Infineon 1200 V 10 A Diode Schottky 2-Pin TO-247
- Infineon 1200 V 10 A Diode SiC Schottky 3-Pin TO-247
- Infineon 1200 V 10 A Diode SiC Schottky 3-Pin TO-247 IDW10G120C5BFKSA1
- Infineon 1200 V 20 A Diode Schottky 3-Pin TO-247 IDW20G120C5BFKSA1
- Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247
- Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247 IDM08G120C5XTMA1
- Infineon 1200 V 15 A Diode Schottky 2-Pin TO-247
- Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247