Infineon 1.2 kV 10 A Diode Schottky 2-Pin TO-247 IDWD10G120C5XKSA1

RS Stock No.:: 222-4837
Mfr. Part No.:: IDWD10G120C5XKSA1
Brand:: Infineon

Infineon 1.2 kV 10 A Diode Schottky 2-Pin TO-247 IDWD10G120C5XKSA1

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Subtotal (1 tube of 30 units)*

Kr. 1 066,68

(exc. VAT)

Kr. 1 333,35

(inc. VAT)

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Units	Per unit	Per Tube*
30 - 30	Kr. 35,556	Kr. 1 066,68
60 - 120	Kr. 33,779	Kr. 1 013,37
150 +	Kr. 32,356	Kr. 970,68

*price indicative

RS Stock No.:: 222-4837
Mfr. Part No.:: IDWD10G120C5XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Diode
	Mount Type	SMD
	Package Type	TO-247
	Maximum Continuous Forward Current If	10A
	Peak Reverse Repetitive Voltage Vrrm	1.2kV
	Series	5th Generation CoolSiCTM 1200V
	Diode Configuration	Silicon Carbide Diode
	Rectifier Type	Schottky
	Pin Count	2
	Maximum Forward Voltage Vf	1.7V
	Minimum Operating Temperature	-55°C
	Peak Reverse Current Ir	80μA
	Peak Non-Repetitive Forward Surge Current Ifsm	140A
	Maximum Operating Temperature	175°C
	Length	40.21mm
	Standards/Approvals	RoHS Compliant
	Width	15.8mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Diode
	Mount Type SMD
	Package Type TO-247
	Maximum Continuous Forward Current If 10A
	Peak Reverse Repetitive Voltage Vrrm 1.2kV
	Series 5th Generation CoolSiCTM 1200V
	Diode Configuration Silicon Carbide Diode
	Rectifier Type Schottky
	Pin Count 2
	Maximum Forward Voltage Vf 1.7V
	Minimum Operating Temperature -55°C
	Peak Reverse Current Ir 80μA
	Peak Non-Repetitive Forward Surge Current Ifsm 140A
	Maximum Operating Temperature 175°C
	Length 40.21mm
	Standards/Approvals RoHS Compliant
	Width 15.8mm
	Automotive Standard No

Datasheet - IDWD10G120C5XKSA1

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 10 A is now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

Real two-pin package with 8.7 mm creepage and clearance distances

Infineon 1.2 kV 10 A Diode Schottky 2-Pin TO-247 IDWD10G120C5XKSA1

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