Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247

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Subtotal (1 reel of 2500 units)*

Kr. 33 565,00

(exc. VAT)

Kr. 41 955,00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 13,426Kr. 33 565,00

*price indicative

RS Stock No.:
222-4830
Mfr. Part No.:
IDM08G120C5XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

Diode

Mount Type

Surface

Package Type

TO-247

Maximum Continuous Forward Current If

8A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Silicon Carbide Schottky Diode

Series

5th Generation thinQ!TM

Rectifier Type

SiC Schottky

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

2.85V

Peak Non-Repetitive Forward Surge Current Ifsm

70A

Maximum Operating Temperature

175°C

Length

6.65mm

Height

10.4mm

Standards/Approvals

JEDEC1)

Automotive Standard

No

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Best-in-class forward voltage (VF)

No reverse recovery charge

Mild positive temperature dependency of VF

Best-in-class surge current capability

Excellent thermal performance

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