Infineon 650 V 4 A Diode 2-Pin D2PAK

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Subtotal (1 reel of 1000 units)*

Kr.7 062 00 

(exc. VAT)

Kr.8 828 00 

(inc. VAT)

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Units
Per unit
Per Reel*
1000 - 1000Kr. 7,062Kr. 7 062,00
2000 +Kr. 6,709Kr. 6 709,00

*price indicative

RS Stock No.:
258-0957
Mfr. Part No.:
IDK04G65C5XTMA2
Brand:
Infineon
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Brand

Infineon

Product Type

Diode

Mount Type

Surface

Package Type

TO-263

Maximum Continuous Forward Current If

4A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

IDK04G65C5

Pin Count

2

Peak Reverse Current Ir

500μA

Peak Non-Repetitive Forward Surge Current Ifsm

215A

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

2.2V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC1, RoHS

Automotive Standard

No

The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.

Revolutionary semiconductor material - Silicon Carbide

Benchmark switching behaviour

No reverse recovery/ No forward recovery

Temperature independent switching behaviour

Enabling higher frequency / increased power density solutions

Higher system reliability due to lower operating temperatures

Reduced EMI

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