Intelligent Memory IME1G16D3EEBG-15EI, SDRAM 1GBit Surface Mount, 667MHz, 96-Pin 96-ball FBGA
- RS Stock No.:
- 588-643
- Mfr. Part No.:
- IME1G16D3EEBG-15EI
- Brand:
- Intelligent Memory
Subtotal (1 unit)*
Kr.66 58
(exc. VAT)
Kr.83 22
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 10 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | Kr. 66,58 |
*price indicative
- RS Stock No.:
- 588-643
- Mfr. Part No.:
- IME1G16D3EEBG-15EI
- Brand:
- Intelligent Memory
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Memory Size | 1GBit | |
| Organisation | 8M x 16 | |
| SDRAM Class | DDR3 | |
| Data Rate | 667MHz | |
| Data Bus Width | 16bit | |
| Maximum Random Access Time | 1.25ns | |
| Mounting Type | Surface Mount | |
| Package Type | 96-ball FBGA | |
| Pin Count | 96 | |
| Maximum Operating Supply Voltage | 1.57 V | |
| Minimum Operating Supply Voltage | 1.42 V | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | 95 °C | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Memory Size 1GBit | ||
Organisation 8M x 16 | ||
SDRAM Class DDR3 | ||
Data Rate 667MHz | ||
Data Bus Width 16bit | ||
Maximum Random Access Time 1.25ns | ||
Mounting Type Surface Mount | ||
Package Type 96-ball FBGA | ||
Pin Count 96 | ||
Maximum Operating Supply Voltage 1.57 V | ||
Minimum Operating Supply Voltage 1.42 V | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature 95 °C | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
Auto refresh and self refresh
Write leveling
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