Intelligent Memory IME1G08D3EEBG-15EI SDRAM 1 GB Surface, 78-Pin 16 bit FBGA-78 Ball
- RS Stock No.:
- 588-649
- Mfr. Part No.:
- IME1G08D3EEBG-15EI
- Brand:
- Intelligent Memory
Subtotal (1 unit)*
Kr. 66,58
(exc. VAT)
Kr. 83,22
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 50 unit(s) shipping from 16 March 2026
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Units | Per unit |
|---|---|
| 1 + | Kr. 66,58 |
*price indicative
- RS Stock No.:
- 588-649
- Mfr. Part No.:
- IME1G08D3EEBG-15EI
- Brand:
- Intelligent Memory
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Memory Size | 1GB | |
| Product Type | SDRAM | |
| Organisation | 16M x 8 | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 800MHz | |
| Maximum Random Access Time | 1.25ns | |
| Number of Words | 16777216 | |
| Mount Type | Surface | |
| Package Type | FBGA-78 Ball | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 78 | |
| Maximum Operating Temperature | 95°C | |
| Length | 10.5mm | |
| Standards/Approvals | RoHS, JEDEC | |
| Series | IME1G(08/16)D3EEB | |
| Minimum Supply Voltage | 1.425V | |
| Maximum Supply Voltage | 1.575V | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Memory Size 1GB | ||
Product Type SDRAM | ||
Organisation 16M x 8 | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 800MHz | ||
Maximum Random Access Time 1.25ns | ||
Number of Words 16777216 | ||
Mount Type Surface | ||
Package Type FBGA-78 Ball | ||
Minimum Operating Temperature -40°C | ||
Pin Count 78 | ||
Maximum Operating Temperature 95°C | ||
Length 10.5mm | ||
Standards/Approvals RoHS, JEDEC | ||
Series IME1G(08/16)D3EEB | ||
Minimum Supply Voltage 1.425V | ||
Maximum Supply Voltage 1.575V | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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