Winbond W949D2DBJX5I Mobile LPDDR SDRAM 512 MB Surface, 90-Pin 32 bit VFBGA
- RS Stock No.:
- 188-2651
- Mfr. Part No.:
- W949D2DBJX5I
- Brand:
- Winbond
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 188-2651
- Mfr. Part No.:
- W949D2DBJX5I
- Brand:
- Winbond
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Winbond | |
| Product Type | Mobile LPDDR SDRAM | |
| Memory Size | 512MB | |
| Organisation | 64M x 8 Bit | |
| Data Bus Width | 32bit | |
| Address Bus Width | 15bit | |
| Number of Bits per Word | 8 | |
| Maximum Clock Frequency | 200MHz | |
| Maximum Random Access Time | 5ns | |
| Number of Words | 64M | |
| Mount Type | Surface | |
| Package Type | VFBGA | |
| Pin Count | 90 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Length | 13.1mm | |
| Standards/Approvals | LVCMOS Compatible | |
| Series | W949D2DB | |
| Width | 8.1 mm | |
| Height | 0.65mm | |
| Automotive Standard | No | |
| Minimum Supply Voltage | 1.7V | |
| Maximum Supply Voltage | 1.95V | |
| Select all | ||
|---|---|---|
Brand Winbond | ||
Product Type Mobile LPDDR SDRAM | ||
Memory Size 512MB | ||
Organisation 64M x 8 Bit | ||
Data Bus Width 32bit | ||
Address Bus Width 15bit | ||
Number of Bits per Word 8 | ||
Maximum Clock Frequency 200MHz | ||
Maximum Random Access Time 5ns | ||
Number of Words 64M | ||
Mount Type Surface | ||
Package Type VFBGA | ||
Pin Count 90 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Length 13.1mm | ||
Standards/Approvals LVCMOS Compatible | ||
Series W949D2DB | ||
Width 8.1 mm | ||
Height 0.65mm | ||
Automotive Standard No | ||
Minimum Supply Voltage 1.7V | ||
Maximum Supply Voltage 1.95V | ||
VDD = 1.7∼1.95V
VDDQ = 1.7∼1.95V
Data width: x16 / x32
Clock rate: 200MHz (-5),166MHz (-6)
Standard Self Refresh Mode
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self Refresh (ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Programmable output buffer driver strength
Four internal banks for concurrent operation
Data mask (DM) for write data
Clock Stop capability during idle periods
Auto Pre-charge option for each burst access
Double data rate for data output
Differential clock inputs (CK and CK)
Bidirectional, data strobe (DQS)
CAS Latency: 2 and 3
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
8K refresh cycles/64 mS
Interface: LVCMOS compatible
Support package:
60 balls VFBGA (x16)
90 balls VFBGA (x32)
Operating Temperature Range
Extended: -25°C ≤ TCASE ≤ 85°C
Industrial: -40°C ≤ TCASE ≤ 85°C
This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits.
Burst Type: Sequential or Interleave
Standard Self Refresh Mode
PASR, ATCSR, Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
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