Infineon SRAM, CY7C1021D-10VXI- 1 MB
- RS Stock No.:
- 194-8911
- Mfr. Part No.:
- CY7C1021D-10VXI
- Brand:
- Infineon
Subtotal (1 tube of 17 units)*
Kr. 590,427
(exc. VAT)
Kr. 738,038
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 17 + | Kr. 34,731 | Kr. 590,43 |
*price indicative
- RS Stock No.:
- 194-8911
- Mfr. Part No.:
- CY7C1021D-10VXI
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | SRAM | |
| Memory Size | 1MB | |
| Organisation | 64K x 16 bit | |
| Number of Words | 64K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 10ns | |
| Timing Type | Asynchronous | |
| Minimum Supply Voltage | 5V | |
| Mount Type | Through Hole | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Package Type | SOJ | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 44 | |
| Standards/Approvals | RoHS | |
| Width | 10.29 mm | |
| Length | 28.7mm | |
| Height | 3.05mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type SRAM | ||
Memory Size 1MB | ||
Organisation 64K x 16 bit | ||
Number of Words 64K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 10ns | ||
Timing Type Asynchronous | ||
Minimum Supply Voltage 5V | ||
Mount Type Through Hole | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Package Type SOJ | ||
Maximum Operating Temperature 85°C | ||
Pin Count 44 | ||
Standards/Approvals RoHS | ||
Width 10.29 mm | ||
Length 28.7mm | ||
Height 3.05mm | ||
This device has an automatic power down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15). Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7.