Infineon Silicon Junction, Single, 75 A, 3-Pin 650 V TO-247 IDW75D65D1XKSA1
- RS Stock No.:
- 218-4379
- Mfr. Part No.:
- IDW75D65D1XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr. 194,94
(exc. VAT)
Kr. 243,675
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 190 unit(s) shipping from 20 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 38,988 | Kr. 194,94 |
| 25 - 45 | Kr. 35,098 | Kr. 175,49 |
| 50 - 120 | Kr. 32,764 | Kr. 163,82 |
| 125 - 245 | Kr. 30,43 | Kr. 152,15 |
| 250 + | Kr. 28,05 | Kr. 140,25 |
*price indicative
- RS Stock No.:
- 218-4379
- Mfr. Part No.:
- IDW75D65D1XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Diode Configuration | Single | |
| Product Type | Silicon Junction | |
| Maximum Forward Current If | 75A | |
| Mount Type | Through Hole | |
| Sub Type | Silicon Junction | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Peak Reverse Recovery Time trr | 108ns | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 580A | |
| Maximum Power Dissipation Pd | 326W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 41.42mm | |
| Series | D75ED1 | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Diode Configuration Single | ||
Product Type Silicon Junction | ||
Maximum Forward Current If 75A | ||
Mount Type Through Hole | ||
Sub Type Silicon Junction | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Peak Reverse Recovery Time trr 108ns | ||
Peak Non-Repetitive Forward Surge Current Ifsm 580A | ||
Maximum Power Dissipation Pd 326W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 41.42mm | ||
Series D75ED1 | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon Rapid 1 series switching emitter controller power silicon diode in dual anode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs. It is used in various applications like in telecom, UPS, welding, adapter, home appliance and air condition. It has forward current of 150 A.
1.35 V temperature-stable forward voltage
Highest softness-factor for ultimate softness and low EMI filtering
Low reverse recovery charge
Low reverse recovery current
For applications switching between 18 kHz and 40 kHz
Related links
- Infineon Silicon Junction 75 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 30 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 40 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247 IDW15E65D2FKSA1
- Infineon Silicon Junction 30 A, 3-Pin 650 V TO-247 IDW30C65D1XKSA1
