STMicroelectronics STP Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 STP80N600K6
- RS Stock No.:
- 275-1356
- Mfr. Part No.:
- STP80N600K6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.60 17
(exc. VAT)
Kr.75 212
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 110 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 30,085 | Kr. 60,17 |
| 10 - 18 | Kr. 27,00 | Kr. 54,00 |
| 20 + | Kr. 26,54 | Kr. 53,08 |
*price indicative
- RS Stock No.:
- 275-1356
- Mfr. Part No.:
- STP80N600K6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.7nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 86W | |
| Maximum Operating Temperature | 150°C | |
| Length | 28.9mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Width | 10.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.7nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 86W | ||
Maximum Operating Temperature 150°C | ||
Length 28.9mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Width 10.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100 percent avalanche tested
Zener protected
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