Infineon BFP650H6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 13 V, 4-Pin TSFP-4-1

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Subtotal (1 pack of 25 units)*

Kr. 82,60

(exc. VAT)

Kr. 103,25

(inc. VAT)

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  • 2 850 unit(s) ready to ship
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Units
Per unit
Per Pack*
25 - 100Kr. 3,304Kr. 82,60
125 - 225Kr. 2,471Kr. 61,78
250 - 600Kr. 2,407Kr. 60,18
625 - 1225Kr. 2,343Kr. 58,58
1250 +Kr. 2,284Kr. 57,10

*price indicative

Packaging Options:
RS Stock No.:
259-1446
Distrelec Article No.:
304-40-489
Mfr. Part No.:
BFP650H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

150mA

Maximum Collector Emitter Voltage Vceo

13V

Package Type

TSFP-4-1

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

13V

Maximum Transition Frequency ft

42GHz

Minimum DC Current Gain hFE

110

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

500mW

Pin Count

4

Maximum Operating Temperature

150°C

Series

BFP

Height

0.9mm

Length

2mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon high linearity low noise SiGe:C NPN RF transistor, It is easy to use Pb-free (RoHS compliant) standard package with visible leads.

Driver amplifier

ISM bands 434 and 868 MHz

1.9 GHz Cordless phones

CATV LNA

Transmitter driver amplifier

Output stage LNA for Active antennas

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