Infineon 4 MB SPI FRAM 8-Pin SOIC, CY15B104Q-SXI

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Subtotal (1 unit)*

Kr.259 46 

(exc. VAT)

Kr.324 32 

(inc. VAT)

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  • 711 unit(s) shipping from 16. februar 2026
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Units
Per unit
1 - 4Kr. 259,46
5 - 9Kr. 214,84
10 - 49Kr. 209,12
50 - 187Kr. 203,75
188 +Kr. 198,48

*price indicative

Packaging Options:
RS Stock No.:
124-2933
Mfr. Part No.:
CY15B104Q-SXI
Brand:
Infineon
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Brand

Infineon

Memory Size

4MB

Product Type

FRAM

Organisation

512 k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Maximum Clock Frequency

40MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Width

5.3 mm

Length

5.3mm

Height

1.78mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Minimum Supply Voltage

2V

Number of Words

512K

Automotive Standard

No

Maximum Supply Voltage

3.6V

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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