Infineon 256 kB SPI FRAM 8-Pin DFN, FM25V02A-DG

View all FRAM Memory
Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.135 11 

(exc. VAT)

Kr.168 888 

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
Per Pack*
2 - 8Kr. 67,555Kr. 135,11
10 - 18Kr. 52,05Kr. 104,10
20 - 98Kr. 50,68Kr. 101,36
100 - 498Kr. 49,365Kr. 98,73
500 +Kr. 48,16Kr. 96,32

*price indicative

Packaging Options:
RS Stock No.:
124-2986
Mfr. Part No.:
FM25V02A-DG
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

FRAM

Memory Size

256kB

Organisation

32K x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mount Type

Surface

Maximum Clock Frequency

40MHz

Package Type

DFN

Pin Count

8

Length

4.5mm

Height

0.75mm

Width

4 mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Number of Words

32k

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2V

Minimum Operating Temperature

-40°C

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Related links