Infineon 64 kB 2 Wire I2C FRAM 8-Pin SOIC
- RS Stock No.:
- 125-4213P
- Mfr. Part No.:
- FM24CL64B-G
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 125-4213P
- Mfr. Part No.:
- FM24CL64B-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 64kB | |
| Product Type | FRAM | |
| Organisation | 8K x 8 bit | |
| Interface Type | 2 Wire I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 550ns | |
| Maximum Clock Frequency | 1MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Height | 1.38mm | |
| Length | 4.97mm | |
| Standards/Approvals | No | |
| Width | 3.98mm | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 2.7V | |
| Number of Words | 8K | |
| Number of Bits per Word | 8 | |
| Automotive Standard | AEC-Q100 | |
| Maximum Supply Voltage | 3.65V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 64kB | ||
Product Type FRAM | ||
Organisation 8K x 8 bit | ||
Interface Type 2 Wire I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 550ns | ||
Maximum Clock Frequency 1MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Height 1.38mm | ||
Length 4.97mm | ||
Standards/Approvals No | ||
Width 3.98mm | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 2.7V | ||
Number of Words 8K | ||
Number of Bits per Word 8 | ||
Automotive Standard AEC-Q100 | ||
Maximum Supply Voltage 3.65V | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
- SICK Encoder Collets for Use with DBS36E-BBxxxx
- HellermannTyton Connectivity Duplex Fibre Optic Patch Panel
- Littelfuse Through Hole Gas Discharge Tube
- RS PRO PT100 RTD Sensor 100mm Long Probe, Class A +200°C Max
- Motorola Talkabout T82 Extreme 16 Channel Walkie Talkies
- Carling Technologies Illuminated DPDT, On-(On) Rocker Switch Panel Mount
- Herga General Purpose Momentary Foot Switch - Thermoplastic Case Material 3 A@ 250 V ac Contact Current, 250V
- RS PRO Silver Aluminium Profile Strut 8mm Groove, 1000mm Length