Infineon 256 kB Parallel FRAM 28-Pin SOIC

View all FRAM Memory
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Subtotal (1 tube of 27 units)*

Kr.3 080 106 

(exc. VAT)

Kr.3 850 146 

(inc. VAT)

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  • Plus 108 unit(s) shipping from 09. februar 2026
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Units
Per unit
Per Tube*
27 - 27Kr. 114,078Kr. 3 080,11
54 - 81Kr. 112,595Kr. 3 040,07
108 - 243Kr. 103,816Kr. 2 803,03
270 - 486Kr. 101,155Kr. 2 731,19
513 +Kr. 98,63Kr. 2 663,01

*price indicative

RS Stock No.:
188-5394
Mfr. Part No.:
FM18W08-SG
Brand:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

256kB

Organisation

32K x 8 Bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Maximum Clock Frequency

1MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

28

Standards/Approvals

No

Width

7.62 mm

Height

2.37mm

Length

18.11mm

Maximum Operating Temperature

85°C

Minimum Supply Voltage

2.7V

Maximum Supply Voltage

5.5V

Number of Words

32k

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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