Infineon 256 kB FRAM 28-Pin SOIC-28
- RS Stock No.:
- 273-5305
- Mfr. Part No.:
- FM18W08-SGTR
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.138 69
(exc. VAT)
Kr.173 36
(inc. VAT)
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In Stock
- Plus 24 unit(s) shipping from 09. februar 2026
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Units | Per unit |
|---|---|
| 1 - 49 | Kr. 138,69 |
| 50 - 99 | Kr. 125,04 |
| 100 + | Kr. 110,05 |
*price indicative
- RS Stock No.:
- 273-5305
- Mfr. Part No.:
- FM18W08-SGTR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 256kB | |
| Organisation | 32k x 8 bit | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Mount Type | Surface | |
| Package Type | SOIC-28 | |
| Pin Count | 28 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 5.5V | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2.7V | |
| Number of Words | 32k | |
| Automotive Standard | No | |
| Minimum Operating Temperature | -40°C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 256kB | ||
Organisation 32k x 8 bit | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Mount Type Surface | ||
Package Type SOIC-28 | ||
Pin Count 28 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 5.5V | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2.7V | ||
Number of Words 32k | ||
Automotive Standard No | ||
Minimum Operating Temperature -40°C | ||
The Infineon FRAM Memory is a 32 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that detail retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory.
RoHS compliant
Low power consumption
SRAM and EEPROM compatible
Superior to battery backed SRAM modules
Resistant to negative voltage undershoots
Related links
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